Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Palladium DC-magnetron sputtering
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.01 .. 0.5 µm
0.01 .. 0.5 µm
Batch size 1
Deposition rate
Rate at which material is added to a wafer
 330 Å/min
Excluded materials gold (category), copper
Material palladium
Pressure
Pressure of process chamber during processing
 5 mTorr
Sides processed either
Temperature 31 °C
Wafer size
Wafer size
Equipment High Res 100
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 stainless steel
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, silicon dioxide, alumina, Borofloat (Schott)
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 1000 µm
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.