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Buffered oxide etch: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
Anisotropic etch
Deep RIE
Isotropic etch
Miscellaneous etch
Strip
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
Buffered oxide etch
Process characteristics:
Depth
Depth to etch in material.
Depth
Å
µm
nm
Depth to etch in material.
unconstrained
Material
Material to be etched.
Material
Borofloat (Schott)
borophosphosilicate glass
BPSG
other
phosphosilicate glass
phosphosilicate glass (low temperature)
Pyrex (Corning 7740)
quartz (fused silica)
quartz (single crystal)
silicon dioxide
silicon dioxide (low temperature)
Material to be etched.
Minimum feature size (masked)
The dimension of the smallest masked feature to be protected during the etch.
Minimum feature size (masked)
Å
µm
nm
The dimension of the smallest masked feature to be protected during the etch.
unconstrained
Minimum feature size (open)
The dimension of the smallest unmasked (open) feature to be etched.
Minimum feature size (open)
Å
µm
nm
The dimension of the smallest unmasked (open) feature to be etched.
unconstrained
Etchant
Solutions and their concentrations.
HF (buffered)
Sides processed
both
Equipment