Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Silicon dioxide LPCVD
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 4 µm
0 .. 4 µm
Allowed materials aluminum, silicon, tungsten, zinc oxide
Deposition rate
Rate at which material is added to a wafer
 150 Å/min
Excluded materials gold
Material silicon dioxide
Measured film thickness variation (+/- %) 10.6
Setup time 60 min
Sides processed both
Temperature 450 °C
Wafer size
Wafer size
Equipment Tylan/Tystar Furnaces (LTO tube)
Equipment characteristics:
Batch sizes 100 mm: 24, 150 mm: 11
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
 quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 1500 µm
Comments:
  • Wafers that have had gold processing at any time are not allowed in the furnace.