Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon dioxide plasma etch
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0.1 .. 2 µm
0.1 .. 2 µm
Ambient
Ambient to which substrate is exposed during processing
 freon
Aspect ratio 10
Batch size 1
Etch rate 0.5 µm/min
Excluded materials gold (category), copper
Material silicon dioxide
Pressure
Pressure of process chamber during processing
 2.8 Torr
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 2.5, silicon dioxide: 1
Sides processed either
Temperature 120 °C
Wafer size
Wafer size
Equipment Tegal 803
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 alumina
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 400 .. 600 µm
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.