Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Low-stress silicon nitride LPCVD ( <120 MPa)
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0 .. 2 µm
0 .. 2 µm
Deposition rate
Rate at which material is added to a wafer
 0.003 µm/min
Material silicon nitride
Measured film thickness variation (+/- %) 8.5
Pressure
Pressure of process chamber during processing
 2.5 kPa
Residual stress 50 .. 120 MPa
Sides processed both
Temperature 800 °C
Wafer size
Wafer size
Equipment Tylan Furnace (Nitride, tube #10)
Equipment characteristics:
Batch sizes 100 mm: 23
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, no-flat
Wafer holder
Device that holds the wafers during processing.
 quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 quartz (fused silica), quartz (single crystal), silicon, silicon germanium, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 600 µm
Comments:
  • This process is for 4" wafers
    ONLY.
  • The set up time consist of:
    vent, load, ramp up,
    stabilization, ramp down,
    backfill and unload.
  • Standard pre-diffusion clean
    at diffusion wet bench.