Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon DRIE (Bosch Process)
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 750 µm
0 .. 750 µm
Aspect ratio 20
Batch size 25
Etch rate 4 µm/min
Material silicon
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 AZ 9245: 90, silicon dioxide: 150, silicon: 1
Sides processed either
Temperature 25 °C
Wafer size
Wafer size
Equipment Unaxis VLR 700 Bosch Chamber
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
 1-flat
Wafer holder
Device that holds the wafers during processing.
 cassette
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 250 .. 800 µm