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How to Start
About MEMS
Nitride growth: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Anneal
Bake
Oxidation
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
Nitride growth
Process characteristics:
Ambient
Ambient to which substrate is exposed during processing (if known).
Ambient
Available
nitrogen
oxygen
Selected
other
Ambient to which substrate is exposed during processing (if known).
Material
Specify nitride material to grow.
Material
other
silicon nitride
tantalum nitride
Specify nitride material to grow.
Temperature
Specify preferred nitridization temperature (if known).
Temperature
°C
Specify preferred nitridization temperature (if known).
unconstrained
Thickness
Thickness of nitride film to be grown.
Thickness
Å
µm
nm
Thickness of nitride film to be grown.
unconstrained
Sides processed
both
Equipment