Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon DRIE
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 1 .. 450 µm
1 .. 450 µm
Aspect ratio 10
Batch size 1
Etch rate 1.5 .. 5 µm/min
Field geometry
Shape of field with dimensions characterized by the maximum field size
 circle
Material silicon
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 75, silicon: 1
Sides processed either
Wafer size
Wafer size
Equipment STS DRIE
  • Only silicon with photoresist and/or silicon dioxide is allowed.
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, no-flat
Wafer holder
Device that holds the wafers during processing.
 metal chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 100 .. 2000 µm
Comments:
  • Only silicon is allowed with either photoresist
    or oxide as the etch mask.
  • For deep etches thick photoresist or thick
    silicon dioxide films can be used for masking.
  • Polymer is cleaned in standard hot acetone soak
    followed by a piranha clean.
  • Pricing policy:
    450.1-600 um: custom quote