Photoresist strip (metal) |
|
Batch size |
25 |
Etchant Solutions and their concentrations. |
PRX-127 |
Material |
photoresist (category) |
Process duration |
20 min |
Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
photoresist (category): 1 |
Sides processed |
both |
Temperature |
50 °C |
Wafer size |
|
Equipment |
Metal wet bench |
Equipment characteristics: |
Wafer geometry Types of wafers this equipment can accept |
no-flat, 1-flat |
Wafer holder Device that holds the wafers during processing. |
teflon cassette |
Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, glass (category), quartz (single crystal), sapphire, silicon on insulator, silicon on sapphire |
Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 700 µm |
Comments: |
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