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How to Start
About MEMS
Develop: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
Anisotropic etch
Deep RIE
Isotropic etch
Miscellaneous etch
Strip
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
Develop
Process characteristics:
Depth
Thickness of photoresist.
Depth
Å
µm
nm
Thickness of photoresist.
unconstrained
Material
Photoresist to develop.
Material
496K PMMA
950K PMMA
Arch OiR 620-7i
Arch OiR 897-10i
Arch OiR 897-12i
Arch OiR 906-17
AZ 1518
AZ 4330
AZ 4620
AZ 5214
AZ 5214e
AZ 7900
AZ 9245
AZ 9260
AZ HiR 1075
AZ nLOF 2070
AZ P4210
AZ P4400
AZ P9260
BARC
Dynachem OFPR
Futurrex NR5-8000
Futurrex NR9-8000
HR200 photoresist
NR1-6000PY
OCG 825 35CS
OCG 897-12i
OCG 897-21i
OCG 897-7i
other
photoresist (G-line)
PMMA
PMMA with MMA
ProTEK B1-18
ProTEK primer
Rogers R/Flex 8080
Shipley 1045
Shipley 1075
Shipley 1805
Shipley 1811
Shipley 1812
Shipley 1813
Shipley 1818
Shipley 1827
Shipley 220
Shipley 3612
Shipley SPR220-3
Shipley SPR220-7
Shipley SPR700 1.2
Shipley SPR955 CM-0.9
Shipley SPR955 CM-2.1
Shipley Ultra i-123
Shipley UV210
Shipley UV6
SU-8
ZEP 520
Photoresist to develop.
Minimum feature size (masked)
The dimension of the smallest feature in the photoresist to remain on the substrate.
Minimum feature size (masked)
Å
µm
nm
The dimension of the smallest feature in the photoresist to remain on the substrate.
unconstrained
Minimum feature size (open)
The dimension of the smallest feature to be etched in the photoresist.
Minimum feature size (open)
Å
µm
nm
The dimension of the smallest feature to be etched in the photoresist.
unconstrained
Sides processed
both
Equipment