Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon dioxide plasma etch (anisotropic)
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 2 µm
0 .. 2 µm
Batch size 24
Etch rate 0.033 µm/min
Material silicon dioxide
Pressure
Pressure of process chamber during processing
 200 mTorr
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 4, silicon dioxide: 1
Sides processed either
Temperature 23 °C
Wafer size
Wafer size
Equipment AMT 8100
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 palette
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, sapphire, quartz (single crystal)
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 600 µm