Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Dry/wet/dry oxidation
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 2 µm
0.1 .. 2 µm
Batch size 24
Material silicon dioxide
Measured film thickness variation (+/- %) 3.4
Pressure
Pressure of process chamber during processing
 1 atm
Sides processed both
Temperature 900 .. 1100 °C
Wafer size
Wafer size
Equipment Thermco TMX furnace (B-stack)
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 530 µm
Comments:
  • Standard wet oxidation process at Michigan.
  • Dry oxidation steps form interface layers only; bulk of oxide comes from the wet oxidation.
  • Wafers must have been Pre-Furnace Cleaned immediately prior to oxidation.