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RF-induction evaporation: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
RF-induction evaporation
Process characteristics:
Material
Material to be deposited.
Material
Alloy 42
aluminum
aluminum/copper [99.5:0.5]
aluminum/silicon [98:2]
aluminum/silicon [99:1]
aluminum/silicon/copper [98:1:1]
AZO
Beryllium Copper
brass
chromium
chromium (transparent)
chromium/aluminum
chromium/gold
chromium/gold/chromium
copper
gallium arsenide
gallium nitride
gallium phosphide
germanium
gold
gold (nano-porous)
gold/titanium
indium phosphide
indium tin oxide
Kovar
lead
metal (category)
molybdenum
Nichrome
nickel
NTO
palladium
permalloy
plating base metal
platinum
polysilicon
ruthenium
Sichrome
silicon
silicon carbide
silver
stainless steel
tantalum
titanium
titanium nitride
titanium/aluminum
titanium/nickel
titanium/tungsten
tungsten
vanadium
zinc
Material to be deposited.
Microstructure
Specify preferred microstructure of deposited film (if known).
Microstructure
Specify preferred microstructure of deposited film (if known).
Residual stress
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
Residual stress
dynes/sq_cm
MPa
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
unconstrained
Thickness
Thickness of film to be deposited.
Thickness
Å
µm
nm
Thickness of film to be deposited.
unconstrained
Sides processed
either
Equipment
Comments:
The substrate is placed in a high vacuum chamber at room temperature with a crucible containing the material to be deposited. The graphite crucible is heated indirectly by an electromagnetic field induced by an RF coil, causing the material in the crucible to evaporate and condense on all exposed cool surfaces on the vacuum chamber and substrate. The process is typically performed on one side of the substrate at a time.