on front Down Stream Plasma Ashing / Stripping |
|
| Process characteristics: |
| Material |
|
|---|
| Depth |
0 .. 10 µm |
|---|
| Etch type |
dry isotropic |
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| Gas |
Oxygen, H2N2, CF4 |
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| Sides processed |
either |
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| Temperature |
250 .. 270 °C |
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| Wafer size |
|
|---|
| Equipment |
Axcelis Down Stream Plasma Asher / Stripper |
| Equipment characteristics: |
| Batch sizes |
100 mm: 25, 150 mm: 25 |
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| Wafer holder Device that holds the wafers during processing. |
cassette |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon on insulator, sapphire, quartz (fused silica), silicon |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
250 .. 800 µm |
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