Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Low-stress silicon nitride LPCVD ( <300 MPa)
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Deposition rate
Rate at which material is added to a wafer
 40 Å/min
Excluded materials gold
Material silicon nitride
Measured film thickness variation (+/- %) 14.9
Refractive index 2.1 .. 2.3
Residual stress 0 .. 300 MPa
Setup time 60 min
Sides processed both
Temperature 835 °C
Wafer size
Wafer size
Equipment Tylan/Tystar Furnaces (low-stress silicon nitride tube)
Equipment characteristics:
Batch sizes 100 mm: 24, 150 mm: 10
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
 quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 600 µm
Comments:
  • DCS/NH3 ratio is 4:1.