Process Hierarchy

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  Selective epitaxy
Process characteristics:
Material
Material to be deposited.
Material
Material to be deposited.
Microstructure
Specify preferred microstructure of deposited film (if known).
Microstructure
Specify preferred microstructure of deposited film (if known).
Residual stress
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
Residual stress
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
unconstrained
Sides processed
Specify whether deposition is to occur on a single or both sides of substrate.
Sides processed
Specify whether deposition is to occur on a single or both sides of substrate.
Thickness
Thickness of film to be deposited.
Thickness
Thickness of film to be deposited.
unconstrained
Equipment
Comments:
  • An epitaxial process based on CVD, MBE, or SPE in which the substrate used is single crystal (e.g., silicon) and partially covered by an amorphous film (e.g., silicon oxide). During the growth, the crystallization will only take place on the exposed single crystal substrate surface, hence it is possible to selectively grow single crystal islands on the substrate. This process may be performed one or both sides of the substrate depending on the exact epitaxial growth process.