Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  10:1 HF dip
Etch rate 200 Å/min
Material concentrations HF/water [1:10]
Process duration 10 s
Setup time 30 min
Sides processed both
Temperature 23 °C
Wafer size
Wafer size
Equipment VLSI sink 6
Equipment characteristics:
MOS clean yes
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
 teflon cassette
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 700 µm