Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Post-aluminum plasma etch (passivation and strip)
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 1.5 µm
0 .. 1.5 µm
Ambient
Ambient to which substrate is exposed during processing
 water, nitrogen, oxygen
Batch size 4
Etch rate 1 µm/min
Loading effects
Free form text field for description of loading effects (e.g. bullseye)
 Highly sensitive
Material photoresist (category)
Min feature size 1 µm
Pressure
Pressure of process chamber during processing
 2 Torr
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 1
Sides processed either
Temperature 225 °C
Wafer size
Wafer size
Equipment Applied Materials Precision 5000 (chamber D)
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 mechanical clamp
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, quartz (single crystal), silicon on insulator, silicon germanium
Wafer thickness
List or range of wafer thicknesses the tool can accept
 400 .. 750 µm
Comments:
  • Etcher is MOS clean.
  • \ No Backside resist. For Quartz substrates Al must be on backside.
  • High power process; Passivation 800W, Strip 1400W.