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Process characteristics: |
Depth Depth of material removed by etch process |
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Batch size |
12 |
Excluded materials |
gold (category), copper |
Material |
photoresist (category) |
Pressure Pressure of process chamber during processing |
1000 mTorr |
Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
photoresist (category): 1 |
Sides processed |
both |
Wafer size |
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Equipment |
Plasma Asher
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Equipment characteristics: |
Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
Wafer holder Device that holds the wafers during processing. |
quartz boat |
Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
Borofloat (Schott), Pyrex (Corning 7740), quartz (single crystal), silicon, silicon on insulator |
Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1000 µm |
Comments: |
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Extra terms |
Customer agrees that wafers, masks, and other materials
incorporating any process(es) provided by this fabrication site
are to be used solely for non-commercial research
purposes.
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