Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon nitride (stress controlled) PECVD
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 5 µm
0 .. 5 µm
Batch size 25
Material silicon nitride
Refractive index 2
Residual stress -100 .. 100 MPa
Sides processed either
Temperature 380 °C
Equipment
Comments:
  • Wafers must be cleaned before
    shipping to fab.
  • 4" or 6" wafers