on front Nickel E-beam evaporation |
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| Process characteristics: |
| Thickness Amount of material added to a wafer |
|
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| Material |
nickel |
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| Sides processed |
either |
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| Temperature |
25 °C |
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| Wafer size |
|
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| Equipment |
SJ-20 evaporator |
| Equipment characteristics: |
| Batch sizes |
100 mm: 8, 50 mm: 8, 75 mm: 8 |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat, notched |
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| Wafer holder Device that holds the wafers during processing. |
rotating orbital |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
gallium arsenide, glass (category), indium phosphide, Pyrex (Corning 7740), quartz (fused silica), silicon |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
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