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About MEMS
Epitaxy: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Epitaxy
Process characteristics:
Material
Material to be deposited.
Material
gallium arsenide
gallium nitride
gallium phosphide
germanium
indium phosphide
polysilicon
silicon
silicon carbide
Material to be deposited.
Microstructure
Specify preferred microstructure of deposited film (if known).
Microstructure
Specify preferred microstructure of deposited film (if known).
Residual stress
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
Residual stress
dynes/sq_cm
MPa
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
unconstrained
Sides processed
Specify whether deposition is to occur on a single or both sides of substrate.
Sides processed
both
either
Specify whether deposition is to occur on a single or both sides of substrate.
Thickness
Thickness of film to be deposited.
Thickness
Å
µm
nm
Thickness of film to be deposited.
unconstrained
Equipment