Process Hierarchy

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  Phosphorus-doped polysilicon LPCVD
  1 Piranha/HF clean
  1.1 Piranha clean (MOS-clean)
  1.2 10:1 HF dip
  2 Phosphorus-doped polysilicon LPCVD
Materialpolysilicon (n-type)
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  3 Spectrophotometric film thickness measurement
Refractive index1 .. 4Thickness0 .. 50 µm
  4 Nitrogen anneal
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  5 Sheet resistance measurement
Process characteristics:
Perform anneal
Required for uniform dopant distribution.
Standard anneal is 30mins long @950C.
Perform anneal*
yes no
Required for uniform dopant distribution. Standard anneal is 30mins long @950C.
Perform clean
Perform clean*
yes no
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Batch sizes 100 mm: 24, 150 mm: 12
Excluded materials gold
Material polysilicon (n-type)
Wafer size
Wafer size
Comments:
  • For the film as deposited, the Bulk Resistivity is ~7.5 ohm-cm.
  • After 30 minutes of N2 anneal at 950C, the bulk resistivity of a
    0.3-0.4 um thick, doped poly film can range between 4E-4 to 2E-3 ohm-cm.