Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Undoped polysilicon LPCVD
  1 Pre-LPCVD clean
  1.1 4:1 Sulfuric/peroxide bath
  1.2 HCl bath
  1.3 50:1 HF dip
  2 Undoped polysilicon LPCVD
Materialpolysilicon
on front
  3 Spectrophotometric film thickness measurement #1
Refractive index0 .. 4Thickness0.005 .. 50 µm
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0 .. 2 µm
0 .. 2 µm
Material polysilicon
Wafer size
Wafer size
Comments:
  • Wafers must be cleaned differently if they have metal or silicides.