Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Aluminum/silicon/copper DC-magnetron sputtering (low power)
on front
  1 Aluminum/silicon/copper DC-magnetron sputtering (low power)
Materialaluminum/silicon/copper [98:1:1]
on front
  2 Stylus profilometer step measurement
Depth100 µm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.01 .. 0.2 µm
0.01 .. 0.2 µm
Excluded materials gold (category), copper
Material aluminum/silicon/copper [98:1:1]
Wafer size
Wafer size
Comments:
  • Film thickness measurements are performed by stylus profilometry. A separate, partially-masked substrate is loaded along with each wafer and is used to measure the thickness of the as-deposited film.
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.