Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Aluminum (1% silicon) wet etch
  1 Aluminum wet etch
Materialaluminum
on front
  2 Silicon freckle plasma etch
Materialsilicon
  3 Photoresist strip (metal)
Materialphotoresist (category)
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 2 µm
0 .. 2 µm
Mask materials
Materials that can be used to mask etching.
 photoresist (category)
Material aluminum/silicon [99:1]
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 aluminum/silicon [99:1]: 1
Wafer size
Wafer size