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Aluminum wet etch: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
Anisotropic etch
Deep RIE
Isotropic etch
Miscellaneous etch
Strip
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Aluminum wet etch
1
Aluminum wet etch
Material
aluminum
on front
2
Stylus profilometer step measurement
Process characteristics:
Depth
Depth of material removed by etch process
Depth
*
µm
nm
Depth of material removed by etch process, must be 0 .. 1 µm
0 .. 1 µm
Batch size
12
Mask materials
Materials that can be used to mask etching.
photoresist (category)
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
aluminum: 1
Wafer size
Wafer size
100 mm
150 mm