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Al/2% Si DC-magnetron sputtering: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Al/2% Si DC-magnetron sputtering
on front
1
Al/2% Si DC-magnetron sputtering
Material
aluminum/silicon [98:2]
on front
2
Stylus profilometer step measurement
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness
*
µm
nm
Amount of material added to a wafer, must be 0 .. 1 µm
0 .. 1 µm
Batch sizes
100 mm: 9, 150 mm: 2
Material
aluminum/silicon [98:2]
Wafer size
Wafer size
100 mm
150 mm