Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Deep RIE (Bosch process) with photolithography
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 550 µm
0 .. 550 µm
Etch rate 1 µm/min
Etchant
Solutions and their concentrations.
 Bosch process
Material silicon
Min feature size 5 µm
Resist thickness 7 µm
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 75, silicon dioxide: 150, silicon: 1
Sides processed either
Wafer size
Wafer size