Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  P-doped polysilicon LPCVD
  1 RCA clean with HF Dip (Pre-furnace clean)
  1.1 RCA clean
  1.2 HF Dip
  2 Phosphorus-doped polysilicon LPCVD
Materialpolysilicon (n-type)
on front
  3 Spectrophotometric film thickness measurement
Thickness20 .. 5000 nm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 5 µm
0.1 .. 5 µm
Excluded materials gold (category), copper
Material polysilicon (n-type)
Wafer size
Wafer size
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.