Register
or
Sign in
Advantages
Capabilities
Company
How to Start
About MEMS
Parylene N deposition: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Parylene N deposition
1
Piranha clean II (non-MOS clean)
2
Application of adhesion promoter (A-174 Silane)
3
Parylene N deposition
Material
Parylene N
on front
4
Spectrophotometric film thickness measurement
Refractive index
1 .. 4
Thickness
0 .. 50 µm
Process characteristics:
Apply adhesion promoter
Apply adhesion promoter
*
yes
no
Measure film thickness
Measure film thickness
*
yes
no
Perform clean
Perform clean
*
yes
no
Thickness
Amount of material added to a wafer
Thickness
*
µm
nm
Amount of material added to a wafer, must be 0.1 .. 8 µm
0.1 .. 8 µm
Batch sizes
100 mm: 3
Material
Parylene N
Sides processed
both
Wafer size
Wafer size
100 mm