Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon dioxide plasma etch (anisotropic)
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  1 Resist hardening
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  2 Silicon dioxide plasma etch (anisotropic)
Materialsilicon dioxide
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  3 Polymer clean-up
Materialpolymer (category)
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 2 µm
0 .. 2 µm
Etch rate 0.033 µm/min
Material silicon dioxide
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 photoresist (category): 4, silicon dioxide: 1
Wafer size
Wafer size
Comments:
  • Polymer clean-up is necessary after this plasma etch.