Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  LTO LPCVD (both sides)
  1 Piranha clean
  2 Pre-furnace clean
  2.1 RCA clean
  2.2 HF dip
  3 LTO LPCVD (both sides)
Materialsilicon dioxide
on front
  4 Spectroscopic ellipsometry film thickness measurement
Thickness0.01 .. 5 µm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.3 .. 4 µm
0.3 .. 4 µm
Batch size 9
MOS clean no
Material silicon dioxide
Microstructure amorphous
Sides processed both
Uniformity -0.2 .. 0.2
Wafer size
Wafer size
Comments:
  • LTO LPCVD process suffers from poor uniformity. Within wafer = +/- 15%; wafer to wafer = +/- 20%.
  • This furnace is metals-contaminated, because it is used to deposit over metalization.