Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Parylene C deposition
  1 Piranha clean II (non-MOS clean)
  2 Application of adhesion promoter (A-174 Silane)
  3 Parylene C deposition
MaterialParylene C
on front
  4 Spectrophotometric film thickness measurement
Refractive index1 .. 4Thickness0 .. 50 µm
Process characteristics:
Apply adhesion promoter
Apply adhesion promoter*
yes no
Measure film thickness
Measure film thickness*
yes no
Perform clean
Perform clean*
yes no
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 15 µm
0.1 .. 15 µm
Batch sizes 100 mm: 3
Material Parylene C
Sides processed both
Wafer size
Wafer size
Comments:
  • Thickness measurement can be done only if the Parylene film is on bare silicon.