Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Phosphoric acid etch
  1 Phosphoric acid etch
Materialsilicon nitride
on front
  2 Spectrophotometric film thickness measurement
Refractive index1 .. 4Thickness0 .. 50 µm
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 1 µm
0 .. 1 µm
Batch size 12
Mask materials
Materials that can be used to mask etching.
 photoresist (category)
Material silicon nitride
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 silicon nitride: 1
Wafer size
Wafer size