Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Contact G-line photolithography (front-back align, OCG 825 35CS)
  1 Dehydration bake
  2 HMDS prime
MaterialHMDS
on front
  3 G-line photoresist coat (OCG 825 35CS)
MaterialOCG 825 35CS
on front
  4 Photoresist softbake
Materialphotoresist (category)
on front
  5 Contact front-back alignment
on front
  6 Contact G-line exposure
MaterialOCG 825 35CS
on front
  7 G-line develop (OCG 825 35CS)
MaterialOCG 825 35CS
on front
  8 Microscope inspection
on front
  9 UV bake
Process characteristics:
Perform deep uv bake
Perform deep uv bake*
yes no
Resist thickness
Resist thickness*
Batch size 12
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
 line
Field geometry
Shape of field with dimensions characterized by the maximum field size
 circle
Magnification 1
Material OCG 825 35CS
Max field size 150 mm
Min feature size 5 µm
Wafer size
Wafer size
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