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Contact I-line photolithography (AZ 5214 - MA6) -Image Reversal-: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Contact mask lithography
Maskless lithography
Miscellaneous lithography
Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Contact I-line photolithography (AZ 5214 - MA6) -Image Reversal-
1
Prebake II
2
HMDS Prime
Material
HMDS
on front
3
Photoresist coat (AZ 5214)
Material
AZ 5214
4
Softbake II
Material
AZ 5214
on front
5
Contact front-front alignment (MA6)
on front
6
I-line exposure (MA6)
Material
photoresist (category)
7
Post-exposure bake
Material
AZ 5214
on front
8
I-line flood exposure (MA6)
Material
photoresist (category)
9
Photoresist developer (AZ 5214)
Material
AZ 5214
10
Hardbake I
Material
photoresist (category)
Process characteristics:
Alignment side
Alignment side
*
back
front
Perform hard bake
Perform hard bake
*
yes
no
Perform prime
Perform prime
*
yes
no
Perform slow bake
Perform slow bake
*
yes
no
Resist thickness
Resist thickness
µm
must be 1.1 .. 1.63 µm
1.1 .. 1.63 µm
Batch size
4
Magnification
1
Material
AZ 5214
Sides processed
either
Wafer size
Wafer size
75 mm
100 mm
Comments:
See
http://www.mems-exchange.org/users/litho-templates
for information about layout requirements.