Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Iridium DC-magnetron sputter
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 3000 Å
0 .. 3000 Å
Ambient
Ambient to which substrate is exposed during processing
 argon
Material iridium
Pressure
Pressure of process chamber during processing
 7 mTorr
Sides processed either
Wafer size
Wafer size
Equipment Enerjet
  • Fixtures exist to support 50mm, 75mm, and 100mm wafers. There is a small edge-exclusion along the entire wafer edge for these fixtures. Up to eight wafers may be sputtered with these fixtures.
  • Clamping fixtures exist to support irregular substrates from 25mm to 75mm wide. Sputter is blocked where clamping fingers hold sample.
  • For irregular samples 25mm to near 50mm wide up to 16 samples may be run per batch.
  • For irregular samples 50mm to 75mm wide only 8 samples can be run per batch.
Equipment characteristics:
Batch sizes 100 mm: 8, 25 .. 49 mm: 16, 50 .. 75 mm: 8
Wafer holder
Device that holds the wafers during processing.
 rotating orbital
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 glass (category), silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 100 .. 1000 µm