Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Advanced oxide etch
Process characteristics:
Depth
Depth*
must be 0.5 .. 30 µm
0.5 .. 30 µm
Mask material
Materials that can be used to mask etching.
Mask material*
Materials that can be used to mask etching.
Material
Material*
Etch rate 0.1 .. 0.5 µm/min
Etch type dry anisotropic
Sides processed either
Wafer size
Wafer size
Equipment STS -AOE
Equipment characteristics:
Batch sizes 100 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 Borofloat (Schott), Pyrex (Corning 7740), quartz (fused silica)
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 800 µm