Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Contact photolithography
  1 Dehydration & vapor prime
on front
  2 G-line photoresist coat (AZ4000)
on front
  3 G-line photoresist bake (AZ4000)
  4 Contact mask align and exposure
  5 G-line resist develop (AZ4000)
on front
  6 G-line photoresist hardbake (AZ4000)
Process characteristics:
Material
Material*
Perform hard bake
Perform hard bake*
yes no
Resist thickness
Resist thickness*
must be 1.3 .. 20 µm
1.3 .. 20 µm
Alignment tolerance
Registration of CAD data to features on wafer
 3 µm
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
 line
Field geometry
Shape of field with dimensions characterized by the maximum field size
 circle
Magnification 1
Min feature size 5 µm
Wafer size
Wafer size
MOS clean no
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