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About MEMS
Ebeam evaporation (CHA): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Ebeam evaporation (CHA)
on front
1
Titanium E-beam Evaporation
Material
titanium
on front
2
Gold E-beam Evaporation
Material
gold
on front
3
Stylus profilometer 1-D step measurement
Process characteristics:
Adhesion layer material
Adhesion layer material
*
chromium
none
titanium
Adhesion layer thickness
If no adhesion layer will be used, enter 0 for this field.
Adhesion layer thickness
*
Å
µm
nm
If no adhesion layer will be used, enter 0 for this field. , must be 0 .. 50 nm
0 .. 50 nm
Material
Material
*
aluminum
chromium
copper
germanium
gold
nickel
platinum
silicon
silver
titanium
Perform sheet resistance measurement
One measurement per batch on a monitor wafer
Perform sheet resistance measurement
*
yes
no
One measurement per batch on a monitor wafer
Thickness
Allowed thickness ranges:
Ag: 0 .. 0.5um
Al: 0 .. 0.2um
Au: 0 .. 1um
Cr: 0 .. 0.5um
Ge: 0 .. 0.025um
Ni: 0 .. 1um
Si: 0 .. 0.750um
Pt: 0 .. 0.1um
Ti: 0 .. 0.1um
Thickness
*
Å
µm
Allowed thickness ranges: Ag: 0 .. 0.5um Al: 0 .. 0.2um Au: 0 .. 1um Cr: 0 .. 0.5um Ge: 0 .. 0.025um Ni: 0 .. 1um Si: 0 .. 0.750um Pt: 0 .. 0.1um Ti: 0 .. 0.1um , must be 0 .. 1 µm
0 .. 1 µm
Wafer size
Wafer size
75 mm
100 mm
150 mm
Comments:
Metrology includes only one measurement on a monitor wafer per batch.
Allowed thickness ranges: (please contact for thicker depositions)
Ag: 0 .. 0.5um
Al: 0 .. 1um
Au: 0 .. 1um
Cr: 0 .. 0.5um
Cu: 0 .. 1um
Ge: 0 .. 0.025um
Ni: 0 .. 1um
Si: 0 .. 0.05um
Pt: 0 .. 0.1um
Ti: 0 .. 0.1um