Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Amorphous silicon LPCVD
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0.1 .. 0.5 µm
0.1 .. 0.5 µm
Batch sizes 100 mm: 50, 150 mm: 25, 75 mm: 50
Material silicon
Measured film thickness variation (+/- %) 10
Sides processed both
Temperature 540 °C
Wafer size
Wafer size
Equipment
Comments:
  • Wafers need to cleaned before submitted to this fab.
  • Compressive residual stress.
  • Very low etch rate in 50% BOE.
  • Estimated lead time for this step is 2 weeks.