Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Amorphous silicon LPCVD (Glass-safe)
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0.01 .. 0.25 µm
0.01 .. 0.25 µm
Batch sizes 100 mm: 50, 150 mm: 25, 75 mm: 50
Material silicon
Measured film thickness variation (+/- %) 10
Sides processed both
Temperature 510 .. 520 °C
Wafer size
Wafer size
Equipment
Comments:
  • Wafers need to cleaned prior to this step.
  • This process has a reduced process temperature for Pyrex 7740 and Schott Borofloat substrates, to minimize breakages due to thermal shock.
  • For all other substrates please use the regular process:
    https://www.mems-exchange.org/catalog/P3308/
  • The film has very slow etch rate in 50% BOE.
  • The film has compressive stress.
  • Estimated leadtime: 2 weeks.