Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Low-stress silicon nitride LPCVD ( <200 MPa)
  1 Pre-LPCVD clean
  1.1 4:1 Sulfuric/peroxide bath
  1.2 HCl bath
  1.3 50:1 HF dip
  2 Low-stress silicon nitride LPCVD ( <200 MPa)
Materialsilicon nitrideRefractive index2.1 .. 2.3Residual stress150 .. 200 MPa
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  3 Spectroscopic ellipsometry film thickness measurement
Thickness0.01 .. 5 µm
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0 .. 2 µm
0 .. 2 µm
Material silicon nitride
Refractive index 2.1 .. 2.3
Residual stress 150 .. 200 MPa
Temperature 850 °C
Wafer size
Wafer size