on front Photoresist ashing (non-clean -March) |
|
Batch size |
1 |
Material |
photoresist (category) |
Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
photoresist (category): 1 |
Sides processed |
either |
Temperature |
25 °C |
Wafer size |
|
Equipment |
March asher
|
Equipment characteristics: |
MOS clean |
no |
Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, silicon carbide, gallium arsenide, Borofloat (Schott), silicon on insulator, quartz (fused silica), Pyrex (Corning 7740) |
Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1000 µm |