Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  G-Line BCB process
  1 Dehydration bake
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  2 G-line BCB coat (BCB 4000)
  3 BCB Contact mask align and exposure
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  4 G-line BCB develop (BCB4000)
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  5 G-line BCB cure
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  6 BCB Dry Etch
Process characteristics:
Material
3022-63: Non-photodefinable (12 -20um)
4024-40: Photodefinable (3 -7um)
4026-46: Photodefinable (6 -14um)
Material*
3022-63: Non-photodefinable (12 -20um) 4024-40: Photodefinable (3 -7um) 4026-46: Photodefinable (6 -14um)
Resist thickness
Resist thickness*
must be 3 .. 20 µm
3 .. 20 µm
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
 line
Field geometry
Shape of field with dimensions characterized by the maximum field size
 circle
Min feature size 30 µm
Wafer size
Wafer size
MOS clean no
Comments:
  • Standard descum process after the cure.Benzocyclobutene (BCB) -based polymer dielectrics
  • CYCLOTENE* Advanced Electronics Resins from The Dow Chemical Company are high-purity polymer solutions that have been developed for microelectronics applications. The resins are derived from B-staged bisbenzocyclobutene (BCB) monomers and are formulated as high-solids, low-viscosity solutions.
  • Notable properties of the resins include:
  • * Low dielectric constant
    * Low loss at high frequency
    * Low moisture absorption
    * Low cure temperature
    * High degree of planarization
    * Low level of ionics
    * High optical clarity
    * Good thermal stability
    * Excellent chemical resistance
    * Good compatibility with various metallization systems
  • The resins are available in photosensitive and dry-etch grades.
  • See its properties at:
    http://www.dow.com/cyclotene/over.htm