Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Aluminum wet etch
Process characteristics:
Depth
Depth*
must be 0.1 .. 5 µm
0.1 .. 5 µm
Batch sizes 100 mm: 25, 150 mm: 1
Etch type wet isotropic
Etchant
Solutions and their concentrations.
 phosphoric acid/nitric acid/acetic acid
Material aluminum
Sides processed both
Temperature 25 °C
Wafer size
Wafer size
Equipment Wet bench
Equipment characteristics:
Piece geometry
Geometry of wafer pieces the equipment can accept
 rectangular, circular
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 quartz (fused silica), silicon carbide, silicon on insulator, quartz (single crystal), sapphire, silicon, Pyrex (Corning 7740), gallium arsenide, indium phosphide
Wafer thickness
List or range of wafer thicknesses the tool can accept
 250 .. 800 µm