on front Silicon oxide dry etch |
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| Process characteristics: |
| Depth |
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| Mask material Materials that can be used to mask etching. |
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| Material |
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| Etch rate |
0.4 .. 0.7 µm/min |
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| Etch type |
dry anisotropic |
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| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
aluminum: 20, photoresist (category): 3, polysilicon: 8 |
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| Sides processed |
either |
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| Wafer size |
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| Equipment |
Applied Materials Centura 5200 etcher |
| Equipment characteristics: |
| Batch sizes |
100 mm: 1, 150 mm: 1 |
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| MOS clean |
no |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
Pyrex (Corning 7740), silicon on insulator, silicon, fused silica |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1000 µm |
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| Comments: |
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| Extra terms |
No materials with Gold contamination will be processed at this fab site. Certain services (for example, oxidation, diffusion, and sputter deposition) will be provided if wafers are virgin, or all pre-processing steps have been performed at this fab site. |
