on front Silicon deep RIE |
|
| Process characteristics: |
| Depth |
|
|---|
| Etch rate |
3 .. 6 µm/min |
|---|
| Etch type |
dry anisotropic |
|---|
| Material |
silicon |
|---|
| Selectivity Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials) |
photoresist (category): 60, silicon dioxide: 100 |
|---|
| Sides processed |
either |
|---|
| Wafer size |
|
|---|
| Equipment |
Applied Materials Centura 5200 etcher |
| Equipment characteristics: |
| Batch sizes |
100 mm: 1, 150 mm: 1 |
|---|
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
Pyrex (Corning 7740), silicon on insulator, silicon, fused silica |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1000 µm |
|---|
| Comments: |
|
| Extra terms |
No materials with Gold contamination will be processed at this fab site. Certain services (for example, oxidation, diffusion, and sputter deposition) will be provided if wafers are virgin, or all pre-processing steps have been performed at this fab site. |
