Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Low Stress silicon nitride LPCVD (200 MPa)
  1 RCA clean
  2 Low-Stress LPCVD Silicon Nitride
  3 Spectrophotometric film thickness measurement
Process characteristics:
Perform clean
Perform clean*
yes no
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.03 .. 2 µm
0.03 .. 2 µm
Batch size 25
Excluded materials gold (category), copper
Material silicon nitride
Pressure
Pressure of process chamber during processing
 1 atm
Sides processed both
Wafer size
Wafer size